A platform for research: civil engineering, architecture and urbanism
EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
von Bardeleben, H. J. (author) / Cantin, J. L. (author)
MATERIALS SCIENCE FORUM ; 353/356 ; 513-516
2001-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Internal friction study of ion-implantation induced defects in silicon
British Library Online Contents | 2006
|Ion implantation induced defects in epitaxial 4H-SiC
British Library Online Contents | 1999
|British Library Online Contents | 2000
|Proton Irradiation Induced Defects in 4H-SiC
British Library Online Contents | 2001
|A comparative study of ion implantation and irradiation-induced defects in Ge crystals
British Library Online Contents | 2006
|