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Ion implantation induced defects in epitaxial 4H-SiC

Hallen, A. / Henry, A. / Pellegrino, P. / Svensson, B.G.

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Ion implantation induced defects in epitaxial 4H-SiC

Hallen, A. / Henry, A. / Pellegrino, P. / Svensson, B.G.

Ion implantation induced defects in epitaxial 4H-SiC

Hallen, A. / Henry, A. / Pellegrino, P. / Svensson, B.G.

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Check availability in my library

Order at Subito €

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Document information

Title:

Ion implantation induced defects in epitaxial 4H-SiC

Contributors:

Hallen, A. (author) / Henry, A. (author) / Pellegrino, P. (author) / Svensson, B.G. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 378 - 381

Publication date:

1999-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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