A platform for research: civil engineering, architecture and urbanism
Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
Kawasuso, A. (author) / Redmann, F. (author) / Krause-Rehberg, R. (author) / Sperr, P. (author) / Frank, T. (author) / Weidner, M. (author) / Pensl, G. (author) / Itoh, H. (author)
MATERIALS SCIENCE FORUM ; 353/356 ; 537-542
2001-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC
British Library Online Contents | 2005
|Elsevier | 2023
|DOAJ | 2023
|Defects in FZ-silicon after neutron irradiation-A positron annihilation and photoluminescence study
British Library Online Contents | 2004
|British Library Online Contents | 2001
|