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Double Implanted Power MESFET Technology in 4H-SiC

Horsfall, A. B. / Ortolland, S. / Wright, N. G. / Johnson, C. M. / Knights, A. P.

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Double Implanted Power MESFET Technology in 4H-SiC

Horsfall, A. B. / Ortolland, S. / Wright, N. G. / Johnson, C. M. / Knights, A. P.

Double Implanted Power MESFET Technology in 4H-SiC

Horsfall, A. B. / Ortolland, S. / Wright, N. G. / Johnson, C. M. / Knights, A. P.

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Check availability in my library

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Document information

Title:

Double Implanted Power MESFET Technology in 4H-SiC

Contributors:

Horsfall, A. B. (author) / Ortolland, S. (author) / Wright, N. G. (author) / Johnson, C. M. (author) / Knights, A. P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 707-710

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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