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High Power Lateral Epitaxy MESFET Technology in Silicon Carbide

Konstantinov, A. O. / Harris, C. I. / Ray, I. C.

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High Power Lateral Epitaxy MESFET Technology in Silicon Carbide

Konstantinov, A. O. / Harris, C. I. / Ray, I. C.

High Power Lateral Epitaxy MESFET Technology in Silicon Carbide

Konstantinov, A. O. / Harris, C. I. / Ray, I. C.

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Order at Subito €

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Document information

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Document information

Title:

High Power Lateral Epitaxy MESFET Technology in Silicon Carbide

Contributors:

Konstantinov, A. O. (author) / Harris, C. I. (author) / Ray, I. C. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 853-856

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Highly Uniform SiC Epitaxy for MESFET Fabrication

Zhang, J. / Mazzola, J. / Hoff, C. et al. | British Library Online Contents | 2006

Double Implanted Power MESFET Technology in 4H-SiC

Horsfall, A. B. / Ortolland, S. / Wright, N. G. et al. | British Library Online Contents | 2001

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Tournier, D. / Godignon, P. / Montserrat, J. et al. | British Library Online Contents | 2002