A platform for research: civil engineering, architecture and urbanism
Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers
Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers
Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers
Yi, H. T. (author) / Cho, J. (author) / Choi, W. J. (author) / Woo, D. H. (author) / Kim, S. H. (author) / Kang, K. N. (author)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 19 ; 835-836
2000-01-01
2 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2004
|British Library Online Contents | 1995
|British Library Online Contents | 1999
|Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures
British Library Online Contents | 2001
|