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Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers
Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers
Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers
Yi, H. T. (Autor:in) / Cho, J. (Autor:in) / Choi, W. J. (Autor:in) / Woo, D. H. (Autor:in) / Kim, S. H. (Autor:in) / Kang, K. N. (Autor:in)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 19 ; 835-836
01.01.2000
2 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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