Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces

Koumetz, S. / Marcon, J. / Gautier, S. et al. | British Library Online Contents | 1999

Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers

Yi, H. T. / Cho, J. / Choi, W. J. et al. | British Library Online Contents | 2000

Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures

Teng, J. H. / Dong, J. R. / Chua, S. J. et al. | British Library Online Contents | 2001

Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers

Yi, H. T. / Cho, J. / Choi, W. J. et al. | British Library Online Contents | 2002

InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

Cao, M. / Wu, H. Z. / Lao, Y. F. et al. | British Library Online Contents | 2009