Photoluminescence from polycrystalline GaN on silicon substrates grown by RF plasma enhanced chemical vapor deposition with ZnO buffer layers: Fid-Bau Portal

Photoluminescence from polycrystalline GaN on silicon substrates grown by RF plasma enhanced chemical vapor deposition with ZnO buffer layers

Park, D. C. / Fujita, S.

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Photoluminescence from polycrystalline GaN on silicon substrates grown by RF plasma enhanced chemical vapor deposition with ZnO buffer layers

Park, D. C. / Fujita, S.

Photoluminescence from polycrystalline GaN on silicon substrates grown by RF plasma enhanced chemical vapor deposition with ZnO buffer layers

Park, D. C. / Fujita, S.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Photoluminescence from polycrystalline GaN on silicon substrates grown by RF plasma enhanced chemical vapor deposition with ZnO buffer layers

Contributors:

Park, D. C. (author) / Fujita, S. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE LETTERS ; 19 ; 631-634

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0261-8028

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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