The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs: Fid-Bau Portal

The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs

Lee, J. M. / Lee, T. W. / Park, S. H. / Min, B. G. / Park, M. P. / Lee, K. H. / Choi, I. H.

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The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs

Lee, J. M. / Lee, T. W. / Park, S. H. / Min, B. G. / Park, M. P. / Lee, K. H. / Choi, I. H.

The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs

Lee, J. M. / Lee, T. W. / Park, S. H. / Min, B. G. / Park, M. P. / Lee, K. H. / Choi, I. H.

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Title:

The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs

Contributors:

Lee, J. M. (author) / Lee, T. W. (author) / Park, S. H. (author) / Min, B. G. (author) / Park, M. P. (author) / Lee, K. H. (author) / Choi, I. H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 79 ; 63 - 67

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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