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    The effect of base emitter space-charge recombination on the temperature dependence of current gains in InGaP/GaAs and AlGaAs/GaAs HBTs

    New search for: Rezazadeh, A. A.
    New search for: Kren, D. E.
    New search for: Crouch, M. A.
    New search for: Jantz, W.
    New search for: Baeumler, M.

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    The effect of base emitter space-charge recombination on the temperature dependence of current gains in InGaP/GaAs and AlGaAs/GaAs HBTs

    New search for: Rezazadeh, A. A.
    New search for: Kren, D. E.
    New search for: Crouch, M. A.
    New search for: Jantz, W.
    New search for: Baeumler, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The effect of base emitter space-charge recombination on the temperature dependence of current gains in InGaP/GaAs and AlGaAs/GaAs HBTs

    New search for: Rezazadeh, A. A.
    New search for: Kren, D. E.
    New search for: Crouch, M. A.
    New search for: Jantz, W.
    New search for: Baeumler, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    The effect of base emitter space-charge recombination on the temperature dependence of current gains in InGaP/GaAs and AlGaAs/GaAs HBTs

    Contributors:

    Rezazadeh, A. A. (author) / Kren, D. E. (author) / Crouch, M. A. (author) / Jantz, W. / Baeumler, M.

    Published in:

    Solid-State Materials for Advanced Technology ; 345-350

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 44

    Publication date:

    1997-01-01

    Size:

    6 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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