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High-barrier height Sn/p-Si schottky diodes with interfacial layer by anodization process
High-barrier height Sn/p-Si schottky diodes with interfacial layer by anodization process
High-barrier height Sn/p-Si schottky diodes with interfacial layer by anodization process
Temircl, C. (Autor:in) / Bati, B. (Autor:in) / Saglam, M. (Autor:in) / Turut, A. (Autor:in)
APPLIED SURFACE SCIENCE ; 172 ; 1-7
01.01.2001
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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