A platform for research: civil engineering, architecture and urbanism
A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium
A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium
A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium
Vernon-Parry, K. D. (author) / Hawkins, I. D. (author) / Evans-Freeman, J. H. (author) / Dawson, P. (author) / Peaker, A. R. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 81 ; 164 - 166
2001-01-01
3 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Excitation mechanism of erbium photoluminescence in bulk silicon and silicon nanostructures
British Library Online Contents | 2003
|Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity
British Library Online Contents | 2001
|Structural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped Silicon
British Library Online Contents | 1997
|Structural defects and dislocation-related photoluminescence in erbium-implanted silicon
British Library Online Contents | 2002
|Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films
British Library Online Contents | 2004
|