A platform for research: civil engineering, architecture and urbanism
Excitation mechanism of erbium photoluminescence in bulk silicon and silicon nanostructures
Excitation mechanism of erbium photoluminescence in bulk silicon and silicon nanostructures
Excitation mechanism of erbium photoluminescence in bulk silicon and silicon nanostructures
Yassievich, I. N. (author) / Moskalenko, A. S. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 105 ; 191-195
2003-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium
British Library Online Contents | 2001
|Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity
British Library Online Contents | 2001
|Structural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped Silicon
British Library Online Contents | 1997
|Structural defects and dislocation-related photoluminescence in erbium-implanted silicon
British Library Online Contents | 2002
|Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films
British Library Online Contents | 2004
|