A platform for research: civil engineering, architecture and urbanism
Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures
Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures
Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures
Callen, O. (author) / Mosser, V. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 142 - 146
2001-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2005
|British Library Online Contents | 2004
|On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities
British Library Online Contents | 2002
|British Library Online Contents | 1992
|Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC
British Library Online Contents | 2000
|