Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy: Fid-Bau Portal

Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy

Morel, A. / Taliercio, T. / Lefebvre, P. / Gallart, M. / Gil, B. / Grandjean, N. / Massies, J. / Grzegory, I. / Porowski, S.

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Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy

Morel, A. / Taliercio, T. / Lefebvre, P. / Gallart, M. / Gil, B. / Grandjean, N. / Massies, J. / Grzegory, I. / Porowski, S.

Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy

Morel, A. / Taliercio, T. / Lefebvre, P. / Gallart, M. / Gil, B. / Grandjean, N. / Massies, J. / Grzegory, I. / Porowski, S.

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Document information

Title:

Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy

Contributors:

Morel, A. (author) / Taliercio, T. (author) / Lefebvre, P. (author) / Gallart, M. (author) / Gil, B. (author) / Grandjean, N. (author) / Massies, J. (author) / Grzegory, I. (author) / Porowski, S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 173 - 177

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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