High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy: Fid-Bau Portal

High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

Ji, S. Y. / Lalev, G. M. / Wang, J. F. / Uchikoshi, M. / Isshiki, M.

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High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

Ji, S. Y. / Lalev, G. M. / Wang, J. F. / Uchikoshi, M. / Isshiki, M.

High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

Ji, S. Y. / Lalev, G. M. / Wang, J. F. / Uchikoshi, M. / Isshiki, M.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

Contributors:

Ji, S. Y. (author) / Lalev, G. M. (author) / Wang, J. F. (author) / Uchikoshi, M. (author) / Isshiki, M. (author)

Published in:

MATERIALS LETTERS ; 59 ; 2370-2373

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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