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HREM study of basal stacking faults in GaN layers grown over sapphire substrate

Potin, V. / Gil, B. / Charar, S. / Ruterana, P. / Nouet, G.

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HREM study of basal stacking faults in GaN layers grown over sapphire substrate

Potin, V. / Gil, B. / Charar, S. / Ruterana, P. / Nouet, G.

HREM study of basal stacking faults in GaN layers grown over sapphire substrate

Potin, V. / Gil, B. / Charar, S. / Ruterana, P. / Nouet, G.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

HREM study of basal stacking faults in GaN layers grown over sapphire substrate

Contributors:

Potin, V. (author) / Gil, B. (author) / Charar, S. (author) / Ruterana, P. (author) / Nouet, G. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 114 - 116

Publication date:

2001-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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