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    Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

    New search for: Tsukidate, Y.
    New search for: Suemitsu, M.

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    Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

    New search for: Tsukidate, Y.
    New search for: Suemitsu, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

    New search for: Tsukidate, Y.
    New search for: Suemitsu, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

    Contributors:

    Tsukidate, Y. (author) / Suemitsu, M. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 175-176 ; 43-48

    Publication date:

    2001-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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