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    Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

    New search for: Sato, T.
    New search for: Kasai, S.
    New search for: Hasegawa, H.

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    Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

    New search for: Sato, T.
    New search for: Kasai, S.
    New search for: Hasegawa, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

    New search for: Sato, T.
    New search for: Kasai, S.
    New search for: Hasegawa, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

    Contributors:

    Sato, T. (author) / Kasai, S. (author) / Hasegawa, H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 175-176 ; 181-186

    Publication date:

    2001-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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