Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique

Hasegawa, H. / Takahashi, H. / Yoshida, T. et al. | British Library Online Contents | 2001

Initial stage of oxidation of hydrogen-terminated silicon surfaces

Hattori, T. / Aiba, T. / Iijima, E. et al. | British Library Online Contents | 1996

Water wettability of Si(111) and (001) surfaces prepared to be reconstructed, atomic-hydrogen terminated and thinly oxidized in an ultrahigh vacuum chamber

Miyagi, T. / Sasahara, A. / Tomitori, M. | British Library Online Contents | 2015

Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces

Yokoyama, S. / Ikeda, N. / Kajikawa, K. et al. | British Library Online Contents | 1998

Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces

Kageshima, H. / Shiraishi, K. | British Library Online Contents | 1998