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    Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique

    New search for: Hasegawa, H.
    New search for: Takahashi, H.
    New search for: Yoshida, T.
    New search for: Sakai, T.

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    Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique

    New search for: Hasegawa, H.
    New search for: Takahashi, H.
    New search for: Yoshida, T.
    New search for: Sakai, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique

    New search for: Hasegawa, H.
    New search for: Takahashi, H.
    New search for: Yoshida, T.
    New search for: Sakai, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique

    Contributors:

    Hasegawa, H. (author) / Takahashi, H. (author) / Yoshida, T. (author) / Sakai, T. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 147 - 151

    Publication date:

    2001-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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