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Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer
Godlewski, M. (author) / Goldys, E. M. (author) / Phillips, M. R. (author) / Paku&lz.xl (author) / a, K. (author) / Baranowski, J. M. (author)
APPLIED SURFACE SCIENCE ; 177 ; 22-31
2001-01-01
10 pages
Article (Journal)
English
DDC:
621.35
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