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Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer
Godlewski, M. (Autor:in) / Goldys, E. M. (Autor:in) / Phillips, M. R. (Autor:in) / Paku&lz.xl (Autor:in) / a, K. (Autor:in) / Baranowski, J. M. (Autor:in)
APPLIED SURFACE SCIENCE ; 177 ; 22-31
01.01.2001
10 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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