Defect Study on Si Implanted with B and BF~2 Ions by Coincidence Doppler Broadening Measurements: Fid-Bau Portal

Defect Study on Si Implanted with B and BF~2 Ions by Coincidence Doppler Broadening Measurements

Akahane, T. / Fujinami, M. / Ohnishi, K. / Sawada, T.

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Defect Study on Si Implanted with B and BF~2 Ions by Coincidence Doppler Broadening Measurements

Akahane, T. / Fujinami, M. / Ohnishi, K. / Sawada, T.

Defect Study on Si Implanted with B and BF~2 Ions by Coincidence Doppler Broadening Measurements

Akahane, T. / Fujinami, M. / Ohnishi, K. / Sawada, T.

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Document information

Title:

Defect Study on Si Implanted with B and BF~2 Ions by Coincidence Doppler Broadening Measurements

Contributors:

Akahane, T. (author) / Fujinami, M. (author) / Ohnishi, K. (author) / Sawada, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 363/365 ; 469-471

Publication date:

2001-01-01

Size:

3 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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