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Defect Study on Si Implanted with B and BF~2 Ions by Coincidence Doppler Broadening Measurements
Defect Study on Si Implanted with B and BF~2 Ions by Coincidence Doppler Broadening Measurements
Defect Study on Si Implanted with B and BF~2 Ions by Coincidence Doppler Broadening Measurements
Akahane, T. (Autor:in) / Fujinami, M. (Autor:in) / Ohnishi, K. (Autor:in) / Sawada, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 363/365 ; 469-471
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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