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Defect study on ion-implanted Si by coincidence Doppler broadening measurements
Defect study on ion-implanted Si by coincidence Doppler broadening measurements
Defect study on ion-implanted Si by coincidence Doppler broadening measurements
Akahane, T. (author) / Fujinami, M. (author) / Sawada, T. (author)
APPLIED SURFACE SCIENCE ; 194 ; 116-121
2002-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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