Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application: Fid-Bau Portal

Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application

Li, H. / Li, C. / He, Y. / Liu, G. / Chen, Y. / Duan, S.

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Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application

Li, H. / Li, C. / He, Y. / Liu, G. / Chen, Y. / Duan, S.

Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application

Li, H. / Li, C. / He, Y. / Liu, G. / Chen, Y. / Duan, S.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application

Contributors:

Li, H. (author) / Li, C. (author) / He, Y. (author) / Liu, G. (author) / Chen, Y. (author) / Duan, S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 83 ; 106 - 110

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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