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    Photoluminescence Properties of C^+ Implanted Epitaxial Si Annealed in Hydrogen Ambience

    New search for: Qiang, W.
    New search for: Yuguo, L.
    New search for: Liwei, S.

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    Photoluminescence Properties of C^+ Implanted Epitaxial Si Annealed in Hydrogen Ambience

    New search for: Qiang, W.
    New search for: Yuguo, L.
    New search for: Liwei, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Photoluminescence Properties of C^+ Implanted Epitaxial Si Annealed in Hydrogen Ambience

    New search for: Qiang, W.
    New search for: Yuguo, L.
    New search for: Liwei, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Photoluminescence Properties of C^+ Implanted Epitaxial Si Annealed in Hydrogen Ambience

    Contributors:

    Qiang, W. (author) / Yuguo, L. (author) / Liwei, S. (author)

    Published in:

    RARE METAL MATERIALS AND ENGINEERING ; 34 ; 256-258

    Publication date:

    2005-01-01

    Size:

    3 pages

    ISSN:

    1002-185X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  669

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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