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Surface reaction kinetics of Ga1-xInxP growth during pulsed chemical beam epitaxy

Dietz, N. / Beeler, S. C. / Schmidt, J. W. / Tran, H. T.

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Surface reaction kinetics of Ga1-xInxP growth during pulsed chemical beam epitaxy

Dietz, N. / Beeler, S. C. / Schmidt, J. W. / Tran, H. T.

Surface reaction kinetics of Ga1-xInxP growth during pulsed chemical beam epitaxy

Dietz, N. / Beeler, S. C. / Schmidt, J. W. / Tran, H. T.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Surface reaction kinetics of Ga1-xInxP growth during pulsed chemical beam epitaxy

Contributors:

Dietz, N. (author) / Beeler, S. C. (author) / Schmidt, J. W. (author) / Tran, H. T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 178 ; 63-74

Publication date:

2001-01-01

Size:

12 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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