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Oxygen partial pressure dependence of suppressing oxidation-induced stacking fault generation in argon ambient annealing including oxygen and HCl
Oxygen partial pressure dependence of suppressing oxidation-induced stacking fault generation in argon ambient annealing including oxygen and HCl
Oxygen partial pressure dependence of suppressing oxidation-induced stacking fault generation in argon ambient annealing including oxygen and HCl
Suzuki, T. (author)
APPLIED SURFACE SCIENCE ; 180 ; 168-172
2001-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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