A platform for research: civil engineering, architecture and urbanism
Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing
Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing
Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing
Liu, W. W. (author) / Yao, B. (author) / Li, Y. F. (author) / Li, B. H. (author) / Zhang, Z. Z. (author) / Shan, C. X. (author) / Zhang, J. Y. (author) / Shen, D. Z. (author) / Fan, X. W. (author)
JOURNAL OF MATERIALS SCIENCE ; 45 ; 6206-6211
2010-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2009
|British Library Online Contents | 2012
|British Library Online Contents | 2001
|Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films
British Library Online Contents | 2008
|N-doped MgZnO alloy thin film prepared by sol-gel method
British Library Online Contents | 2011
|