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Ab initio modeling study of boron diffusion in silicon

Windl, W. / Stumpf,, R. / Liu, X. Y. / Masquelier, M. P.

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Ab initio modeling study of boron diffusion in silicon

Windl, W. / Stumpf,, R. / Liu, X. Y. / Masquelier, M. P.

Ab initio modeling study of boron diffusion in silicon

Windl, W. / Stumpf,, R. / Liu, X. Y. / Masquelier, M. P.

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Title:

Ab initio modeling study of boron diffusion in silicon

Contributors:

Windl, W. ( author ) / Stumpf,, R. ( author ) / Liu, X. Y. ( author ) / Masquelier, M. P. ( author )

Published in:

COMPUTATIONAL MATERIALS SCIENCE ; 21 ; 496-504

Publication date:

2001-01-01

Size:

9 pages

ISSN:

0927-0256

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1 / 510

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