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    Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400^oC

    New search for: Sedky, S.
    New search for: Witvrouw, A.
    New search for: Saerens, A.
    New search for: Van Houtte, P.
    New search for: Poortmans, J.
    New search for: Baert, K.

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    Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400^oC

    New search for: Sedky, S.
    New search for: Witvrouw, A.
    New search for: Saerens, A.
    New search for: Van Houtte, P.
    New search for: Poortmans, J.
    New search for: Baert, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400^oC

    New search for: Sedky, S.
    New search for: Witvrouw, A.
    New search for: Saerens, A.
    New search for: Van Houtte, P.
    New search for: Poortmans, J.
    New search for: Baert, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400^oC

    Contributors:

    Sedky, S. (author) / Witvrouw, A. (author) / Saerens, A. (author) / Van Houtte, P. (author) / Poortmans, J. (author) / Baert, K. (author)

    Published in:

    JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 16 ; 2607-2612

    Publication date:

    2001-01-01

    Size:

    6 pages

    ISSN:

    0884-2914

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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