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Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H~2 and Ar dilution
Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H~2 and Ar dilution
Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H~2 and Ar dilution
Kosarev, A. (author) / Torres, A. (author) / Hernandez, Y. (author) / Ambrosio, R. (author) / Zuniga, C. (author) / Felter, T. E. (author) / Asomoza, R. (author) / Kudriavtsev, Y. (author) / Silva-Gonzalez, R. (author) / Gomez-Barojas, E. (author)
2006-01-01
17 pages
Article (Journal)
English
DDC:
620.11
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