Depth profile and annealing behavior study of 350 keV Bi+ ions implanted into LiNbO3

Chen, F. / Hu, H. / Zhang, J. H. et al. | British Library Online Contents | 2001

High-temperature annealing behavior of ion-implanted spinel single crystals

Enescu, S. E. / Thome, L. / Gentils, A. et al. | British Library Online Contents | 2004

Lattice site and photoluminescence of erbium implanted in -Al~2O~3

Van den Hoven, G. N. / Polman, A. / Alves, E. et al. | British Library Online Contents | 1997

Annealing behavior of luminescence from erbium-implanted GaN films

Zavada, J. M. / Ellis, C. J. / Lin, J. Y. et al. | British Library Online Contents | 2001

Annealing behavior and lattice site location of Hf implanted GaN

Alves, E. / da Silva, M.F. / Marques, J.G. et al. | British Library Online Contents | 1999