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    Depth profile and annealing behavior study of 350 keV Bi+ ions implanted into LiNbO3

    New search for: Chen, F.
    New search for: Hu, H.
    New search for: Zhang, J. H.
    New search for: Liu, X. D.
    New search for: Shi, B. R.
    New search for: Lu, F.
    New search for: Wang, K. M.

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    Depth profile and annealing behavior study of 350 keV Bi+ ions implanted into LiNbO3

    New search for: Chen, F.
    New search for: Hu, H.
    New search for: Zhang, J. H.
    New search for: Liu, X. D.
    New search for: Shi, B. R.
    New search for: Lu, F.
    New search for: Wang, K. M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Depth profile and annealing behavior study of 350 keV Bi+ ions implanted into LiNbO3

    New search for: Chen, F.
    New search for: Hu, H.
    New search for: Zhang, J. H.
    New search for: Liu, X. D.
    New search for: Shi, B. R.
    New search for: Lu, F.
    New search for: Wang, K. M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Depth profile and annealing behavior study of 350 keV Bi+ ions implanted into LiNbO3

    Contributors:

    Chen, F. (author) / Hu, H. (author) / Zhang, J. H. (author) / Liu, X. D. (author) / Shi, B. R. (author) / Lu, F. (author) / Wang, K. M. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 86 ; 15 - 19

    Publication date:

    2001-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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