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Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy

Giannazzo, F. / Calcagno, L. / Roccaforte, F. / Musumeci, P. / La Via, F. / Raineri, V.

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Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy

Giannazzo, F. / Calcagno, L. / Roccaforte, F. / Musumeci, P. / La Via, F. / Raineri, V.

Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy

Giannazzo, F. / Calcagno, L. / Roccaforte, F. / Musumeci, P. / La Via, F. / Raineri, V.

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Title:

Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy

Contributors:

Giannazzo, F. (author) / Calcagno, L. (author) / Roccaforte, F. (author) / Musumeci, P. (author) / La Via, F. (author) / Raineri, V. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 183-189

Publication date:

2001-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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