Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy: Fid-Bau Portal

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

Giannazzo, F. / Rambach, M. / Salinas, D. / Roccaforte, F. / Raineri, V.

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Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

Giannazzo, F. / Rambach, M. / Salinas, D. / Roccaforte, F. / Raineri, V.

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

Giannazzo, F. / Rambach, M. / Salinas, D. / Roccaforte, F. / Raineri, V.

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Title:

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

Contributors:

Giannazzo, F. (author) / Rambach, M. (author) / Salinas, D. (author) / Roccaforte, F. (author) / Raineri, V. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 457-460

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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