Activation Study of Implanted N^+ in 6H-SiC by Scanning Capacitance Microscopy: Fid-Bau Portal

Activation Study of Implanted N^+ in 6H-SiC by Scanning Capacitance Microscopy

Raineri, V. / Calcagno, L. / Giannazzo, F. / Goghero, D. / Musumeci, F. / Roccaforte, F. / La Via, F.

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Activation Study of Implanted N^+ in 6H-SiC by Scanning Capacitance Microscopy

Raineri, V. / Calcagno, L. / Giannazzo, F. / Goghero, D. / Musumeci, F. / Roccaforte, F. / La Via, F.

Activation Study of Implanted N^+ in 6H-SiC by Scanning Capacitance Microscopy

Raineri, V. / Calcagno, L. / Giannazzo, F. / Goghero, D. / Musumeci, F. / Roccaforte, F. / La Via, F.

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Title:

Activation Study of Implanted N^+ in 6H-SiC by Scanning Capacitance Microscopy

Contributors:

Raineri, V. (author) / Calcagno, L. (author) / Giannazzo, F. (author) / Goghero, D. (author) / Musumeci, F. (author) / Roccaforte, F. (author) / La Via, F. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 375-378

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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