Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C-SiC layers in silicon: Fid-Bau Portal

Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C-SiC layers in silicon

Lindner, J. K. / Wenzel, S. / Stritzker, B.

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Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C-SiC layers in silicon

Lindner, J. K. / Wenzel, S. / Stritzker, B.

Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C-SiC layers in silicon

Lindner, J. K. / Wenzel, S. / Stritzker, B.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C-SiC layers in silicon

Contributors:

Lindner, J. K. (author) / Wenzel, S. (author) / Stritzker, B. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 299-306

Publication date:

2001-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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