A platform for research: civil engineering, architecture and urbanism
Structural characterization of highly boron doped SiGe/Si heterostructures
Structural characterization of highly boron doped SiGe/Si heterostructures
Structural characterization of highly boron doped SiGe/Si heterostructures
Woitok, J. F. (author) / Visser, C. C. (author) / Scholtes, T. L. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 216 - 220
2002-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth and electrical characterisation of highly doped p-SiGe/Si heterostructures
British Library Online Contents | 2002
|Strain Engineering in Highly Mismatched SiGe/Si Heterostructures
British Library Online Contents | 2017
|Acceptor states in boron doped SiGe quantum wells
British Library Online Contents | 1997
|Acceptor states in boron doped SiGe quantum wells
British Library Online Contents | 1997
|Weak localization in SiGe quantum wells doped with boron
British Library Online Contents | 2002
|