A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition
Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition
Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition
Suvar, E. (author) / Radamson, H. H. (author) / Grahn, J. V. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 314 - 318
2002-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition
| British Library Online Contents | 2000
| British Library Online Contents | 2002
Chemical vapor deposition of hexagonal boron nitride films in the reduced pressure
| British Library Online Contents | 1999
High temperature chemical vapor deposition of silicon on Fe(100)
| British Library Online Contents | 2001
Low pressure chemical vapor deposition of niobium coating on silicon carbide
| British Library Online Contents | 2009