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Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures
Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures
Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures
Sedky, S. (author) / Witvrouw, A. (author) / Caymax, M. (author) / Saerens, A. (author) / Van Houtte, P. (author)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 17 ; 1580-1586
2002-01-01
7 pages
Article (Journal)
English
DDC:
620.11
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