The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy: Fid-Bau Portal

The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

Tomm, J. W. / Maadorf, A. / Mazur, Y. I. / Gramlich, S. / Richter, E. / Brunner, F. / Weyers, M. / Trankle, G. / Malyarchuk, V. / Gunther, T.

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The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

Tomm, J. W. / Maadorf, A. / Mazur, Y. I. / Gramlich, S. / Richter, E. / Brunner, F. / Weyers, M. / Trankle, G. / Malyarchuk, V. / Gunther, T.

The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

Tomm, J. W. / Maadorf, A. / Mazur, Y. I. / Gramlich, S. / Richter, E. / Brunner, F. / Weyers, M. / Trankle, G. / Malyarchuk, V. / Gunther, T.

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Title:

The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

Contributors:

Tomm, J. W. (author) / Maadorf, A. (author) / Mazur, Y. I. (author) / Gramlich, S. (author) / Richter, E. (author) / Brunner, F. (author) / Weyers, M. (author) / Trankle, G. (author) / Malyarchuk, V. (author) / Gunther, T. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 25 - 28

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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