Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of Al mole fraction up to 0.5: Fid-Bau Portal

Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of Al mole fraction up to 0.5

Ahoujja, M. / McFall, J. L. / Yeo, Y. K. / Hengehold, R. L. / Van Nostrand, J. E.

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Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of Al mole fraction up to 0.5

Ahoujja, M. / McFall, J. L. / Yeo, Y. K. / Hengehold, R. L. / Van Nostrand, J. E.

Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of Al mole fraction up to 0.5

Ahoujja, M. / McFall, J. L. / Yeo, Y. K. / Hengehold, R. L. / Van Nostrand, J. E.

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Title:

Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of Al mole fraction up to 0.5

Contributors:

Ahoujja, M. (author) / McFall, J. L. (author) / Yeo, Y. K. (author) / Hengehold, R. L. (author) / Van Nostrand, J. E. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 285 - 289

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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