Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy: Fid-Bau Portal

Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Hussein, A. S. / Hassan, Z. / Thahab, S. M. / Ng, S. S. / Hassan, H. A. / Chin, C. W.

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Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Hussein, A. S. / Hassan, Z. / Thahab, S. M. / Ng, S. S. / Hassan, H. A. / Chin, C. W.

Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Hussein, A. S. / Hassan, Z. / Thahab, S. M. / Ng, S. S. / Hassan, H. A. / Chin, C. W.

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Order at Subito €

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Title:

Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Contributors:

Hussein, A. S. (author) / Hassan, Z. (author) / Thahab, S. M. (author) / Ng, S. S. (author) / Hassan, H. A. (author) / Chin, C. W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 4159-4164

Publication date:

2011-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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