A platform for research: civil engineering, architecture and urbanism
Effects of thermal annealing on GaN epilayers deposited on (0001) sapphire
Effects of thermal annealing on GaN epilayers deposited on (0001) sapphire
Effects of thermal annealing on GaN epilayers deposited on (0001) sapphire
Bosi, M. (author) / Fornari, R. (author) / Armani, N. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 294 - 297
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
British Library Online Contents | 2004
|Precipitates in GaN epilayers grown on sapphire substrates
British Library Online Contents | 1998
|β-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD
British Library Online Contents | 2018
|Diode laser annealing of epitaxy Ge on sapphire (0001) grown by magnetron sputtering
British Library Online Contents | 2017
|Orientation of cracks in AlGaN epilayers with sapphire substrates
British Library Online Contents | 2003
|