A platform for research: civil engineering, architecture and urbanism
β-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD
β-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD
β-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD
Cao, Qiong (author) / He, Linan (author) / Xiao, Hongdi (author) / Feng, Xianjin (author) / Lv, Yuanjie (author) / Ma, Jin (author)
Materials science in semiconductor processing ; 77 ; 58-63
2018-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy
British Library Online Contents | 2016
|Microstructure of epitaxial VO~2 thin films deposited on (1120) sapphire by MOCVD
British Library Online Contents | 1994
|Epitaxial LiNbO~3 thin films on sapphire substrates grown by solid source MOCVD
British Library Online Contents | 1994
|Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates
British Library Online Contents | 2004
|Epitaxial relationships and optical properties of SnO2 films deposited on sapphire substrates
British Library Online Contents | 2011
|