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Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
Park, S. H. (author) / Kang, T. W. (author) / Kim, T. W. (author)
JOURNAL OF MATERIALS SCIENCE ; 39 ; 3217-3219
2004-01-01
3 pages
Article (Journal)
English
DDC:
620.11
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